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 TZX-Series
Vishay Semiconductors
Small Signal Zener Diodes
Features
* * * * * * Very sharp reverse characteristic Low reverse current level e2 Very high stability Low noise Lead (Pb)-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
94 9367
Applications
* Voltage stabilization
Mechanical Data
Case: DO35 Glass case Weight: approx. 125 mg Cathode Band Color: black Packaging codes/options: TAP/10 k per Ammopack (52 mm tape), 30 k/box
Absolute Maximum Ratings
Tamb = 25 C, unless otherwise specified
Parameter Power dissipation Z-current Junction temperature Storage temperature range Test condition l = 4 mm, TL = 25 C Symbol Ptot IZ Tj Tstg Value 500 Ptot/VZ 175 - 65 to + 175 Unit mW mA C C
Thermal Characteristics
Tamb = 25 C, unless otherwise specified
Parameter Thermal resistance junction to ambient air Test condition l = 4 mm, TL = constant Symbol RthJA Value 300 Unit K/W
Electrical Characteristics
Tamb = 25 C, unless otherwise specified
Parameter Forward voltage Test condition IF = 200 mA Symbol VF Min Typ. Max 1.5 Unit V
Document Number 85614 Rev. 2.1, 27-Mar-07
www.vishay.com 1
TZX-Series
Vishay Semiconductors Electrical Characteristics
Partnumber Partnumber group Zener Voltage VZ at IZ V min TZX2V4 TZX2V7 TZX2V4A TZX2V4B TZX2V7A TZX2V7B TZX2V7C TZX3V0 TZX3V0A TZX3V0B TZX3V0C TZX3V3 TZX3V3A TZX3V3B TZX3V3C TZX3V6 TZX3V6A TZX3V6B TZX3V6C TZX3V9 TZX3V9A TZX3V9B TZX3V9C TZX4V3 TZX4V3A TZX4V3B TZX4V3C TZX4V3D TZX4V7 TZX4V7A TZX4V7B TZX4V7C TZX4V7D TZX5V1 TZX5V1A TZX5V1B TZX5V1C TZX5V1D TZX5V6 TZX5V6A TZX5V6B TZX5V6C TZX5V6D TZX5V6E TZX6V2 TZX6V2A TZX6V2B TZX6V2C TZX6V2D TZX6V2E TZX6V8 TZX6V8A TZX6V8B TZX6V8C TZX6V8D 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 3.9 4 4.1 4.2 4.3 4.4 4.5 4.6 4.7 4.8 4.9 5 5.1 5.2 5.3 5.4 5.5 5.6 5.7 5.8 6 6.1 6.3 6.4 6.6 6.7 6.9 V max 2.5 2.6 2.7 2.8 2.9 3 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 3.9 4 4.1 4.2 4.3 4.4 4.5 4.6 4.7 4.8 4.9 5 5.1 5.2 5.3 5.5 5.6 5.7 5.8 5.9 6 6.1 6.3 6.4 6.6 6.7 6.9 7 7.2 Dynamic Resistance rZ at IZ max 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 40 40 40 40 40 15 15 15 15 15 15 15 15 15 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 Test Current IZ mA IR A max 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 1 1 1 1 1 1 1 1 1 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 1 1 1 1 1 1 1 1 1 1.5 1.5 1.5 1.5 2 2 2 2 2 2 2 2 2 2 2 2 2 3 3 3 3 3 3.5 3.5 3.5 3.5 Reverse Leakage Current at VR V IR1) A max 50 50 10 10 10 6 6 6 2 2 2 2 2 2 2 2 2 1 1 1 1 6 5 4 3 2 2 2 2 1 1 1 1 1 3 3 3 3 3 2 2 2 2 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 2 2 2 2 2 2 2 2 2 2 2 2 2 4 4 4 4 4 4 4 4 4 at VR1) V
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Document Number 85614 Rev. 2.1, 27-Mar-07
TZX-Series
Vishay Semiconductors
Partnumber Partnumber group Zener Voltage VZ at IZ V min TZX7V5 TZX7V5A TZX7V5B TZX7V5C TZX7V5D TZX7V5X TZX8V2 TZX8V2A TZX8V2B TZX8V2C TZX8V2D TZX9V1 TZX9V1A TZX9V1B TZX9V1C TZX9V1D TZX9V1E TZX10 TZX10A TZX10B TZX10C TZX10D TZX11 TZX11A TZX11B TZX11C TZX11D TZX12 TZX12A TZX12B TZX12C TZX12D TZX12X TZX13 TZX13A TZX13B TZX13C TZX14 TZX14A TZX14B TZX14C TZX15 TZX15A TZX15B TZX15C TZX15X TZX16 TZX16A TZX16B TZX16C TZX18A TZX18A TZX18B TZX18C TZX20A TZX20A TZX20B TZX20C 7 7.2 7.3 7.5 7.07 7.7 7.9 8.1 8.3 8.5 8.7 8.9 9.1 9.3 9.5 9.7 9.9 10.2 10.4 10.7 10.9 11.1 11.4 11.6 11.9 12.2 11.44 12.4 12.6 12.9 13.2 13.5 13.8 14.1 14.5 14.9 14.35 15.3 15.7 16.3 16.9 17.5 18.1 18.8 19.5 20.2 V max 7.3 7.6 7.7 7.9 7.45 8.1 8.3 8.5 8.7 8.9 9.1 9.3 9.5 9.7 9.9 10.1 10.3 10.6 10.8 11.1 11.3 11.6 11.9 12.1 12.4 12.7 12.03 12.9 13.1 13.4 13.7 14 14.3 14.7 15.1 15.5 15.09 15.9 16.5 17.1 17.7 18.3 19 19.7 20.4 21.2 Dynamic Resistance rZ at IZ max 15 15 15 15 15 20 20 20 20 20 20 20 20 20 25 25 25 25 25 25 25 25 35 35 35 35 35 35 35 35 35 35 35 40 40 40 40 45 45 45 55 55 55 60 60 60 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 2 2 2 Test Current IZ mA IR A max 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 5 5 5 5 5 6.2 6.2 6.2 6.2 6.8 6.8 6.8 6.8 6.8 7.5 7.5 7.5 7.5 8.2 8.2 8.2 8.2 9.5 9.5 9.5 9.5 9.5 10 10 10 11 11 11 11.5 11.5 11.5 11.5 12 12 12 13 13 13 15 15 15 Reverse Leakage Current at VR V IR1) A max 30 30 30 30 30 0.1 0.1 0.1 0.1 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 6.65 6.84 6.94 7.13 6.72 7.32 7.5 7.7 7.98 8.08 8.27 8.46 8.65 8.84 9.03 9.22 9.41 9.69 9.88 10.2 10.4 10.5 10.8 11 11.3 11.6 10.9 11.8 12 12.3 12.5 12.8 13.1 13.4 13.8 14.2 13.6 14.5 14.9 15.5 16.1 16.6 17.2 17.9 18.5 19.2 at VR1) V
Document Number 85614 Rev. 2.1, 27-Mar-07
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TZX-Series
Vishay Semiconductors
Partnumber Partnumber group Zener Voltage VZ at IZ V min TZX22 TZX22A TZX22B TZX22C TZX24 TZX24A TZX24B TZX24C TZX24X TZX27 TZX27A TZX27B TZX27C TZX27X TZX30 TZX30A TZX30B TZX30C TZX30X TZX33 TZX33A TZX33B TZX33C TZX36 TZX36A TZX36B TZX36C TZX36X
1)
Dynamic Resistance rZ at IZ max 65 65 65 70 70 70 70 80 80 80 80 100 100 100 100 120 120 120 140 140 140 140
Test Current IZ mA 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 IR A max 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1
Reverse Leakage Current at VR V 17 17 17 19 19 19 19 21 21 21 21 23 23 23 23 25 25 25 27 27 27 27 IR1) A max 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 19.9 20.5 21.2 21.8 22.4 23.1 21.5 23.9 24.9 25.8 25.6 26.8 27.7 28.7 27.6 29.6 30.6 31.5 32.5 33.5 34.6 33.6 at VR1) V
V max 21.9 22.6 23.3 24 24.7 25.5 23.77 26.6 27.6 28.6 28.39 29.6 30.6 31.6 30.51 32.6 33.6 34.5 35.7 36.8 38 37.19
20.9 21.6 22.3 22.9 23.6 24.3 22.61 25.2 26.2 27.2 26.99 28.2 29.2 30.2 29.02 31.2 32.2 33.2 34.2 35.3 36.4 35.36
Additional measurement
NOTE: Additional measurement of voltage group TZM9V1 to TZX36, IR at 95 % VZmin 40 nA at Tj = 25 C
Typical Characteristics
Tamb = 25 C, unless otherwise specified
RthJA - Therm. Resist. Junction Ambient (K/W) Ptot - Total Power Dissipation (mW) 500 400 300 l 200 100 TL = constant 0 0 5 10 15 20
95 9611
600 500 400 300 200 100 0 0
l
40
80
120
160
200
I - Lead Length (mm)
95 9602
Tamb - Ambient Temperature (C)
Figure 1. Thermal Resistance vs. Lead Length
Figure 2. Total Power Dissipation vs. Ambient Temperature
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Document Number 85614 Rev. 2.1, 27-Mar-07
TZX-Series
Vishay Semiconductors
1000 CD - Diode Capacitance (pF) VZ - Voltage Change (mV) 200
Tj = 25 C
150
VR = 2 V Tj = 25 C
100
100
IZ = 5 mA
10
50
1 0
95 9598
0 5 10 15 20 25 0
95 9601
5
10
15
20
25
VZ - Z-Voltage (V)
VZ - Z-Voltage (V)
Figure 3. Typical Change of Working Voltage under Operating Conditions at Tamb = 25 C
Figure 6. Diode Capacitance vs. Z-Voltage
VZtn - Relative Voltage Change
1.3 IF - Forward Current (mA)
VZtn = VZt/VZ (25 C)
100 10
Tj = 25 C
1.2 1.1 1.0 0.9 0.8 - 60
95 9599
TKVZ = 10 x 10-4/K 8 x 10-4/K 6 x 10-4/K 4 x 10 /K 2 x 10-4/K
-4
1
0
- 2 x 10-4/K - 4 x 10-4/K
0.1 0.01 0.001
0
60
120
180
240
95 9605
0
0.2
0.4
0.6
0.8
1.0
Tj - Junction Temperature (C)
VF - Forward Voltage (V)
Figure 4. Typical Change of Working Voltage vs. Junction Temperature
Figure 7. Forward Current vs. Forward Voltage
TKVZ - Temperature Coefficient of VZ (10-4/K)
15
100 80 IZ - Z-Current (mA)
Ptot = 500 mW Tamb = 25 C
10
60 40 20 0
5
IZ = 5 mA
0
-5 0
95 9600
10
20 40 30 VZ - Z-Voltage (V)
50
0
95 9604
4
6
8
12
20
VZ - Z-Voltage (V)
Figure 5. Temperature Coefficient of Vz vs. Z-Voltage
Figure 8. Z-Current vs. Z-Voltage
Document Number 85614 Rev. 2.1, 27-Mar-07
www.vishay.com 5
TZX-Series
Vishay Semiconductors
50 40 30 20 10 0 15
95 9607
IZ - Z-Current (mA)
Ptot = 500 mW Tamb = 25 C
rZ - Differential Z-Resistance ()
1000
IZ = 1 mA
100
5 mA
10 10 mA
1
Tj = 25 C
20
25
30
35
95 9606
0
5
10
15
20
25
VZ - Z-Voltage (V)
VZ - Z-Voltage (V)
Figure 9. Z-Current vs. Z-Voltage
Figure 10. Differential Z-Resistance vs. Z-Voltage
Zthp - Thermal Resistance for Pulse Cond. (KW)
1000
tP/T = 0.5 100 tP/T = 0.2 Single Pulse 10 tP/T = 0.1 tP/T = 0.02 iZM = (- VZ + (VZ2 + 4rzj x T/Zthp) 1/2)/(2rzj) 100 101 tP - Pulse Length (ms) 102 tP/T = 0.01 tP/T = 0.05 1 10-1
95 9603
RthJA = 300 K/W T = Tjmax - Tamb
Figure 11. Thermal Response
Package Dimensions in millimeters (inches): DO35
Cathode Identification
0.55 max. (0.022)
Rev. 6 - Date: 29. January 2007 Document no.: 6.560-5004.02-4
94 9366
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Document Number 85614 Rev. 2.1, 27-Mar-07
1.7 (0.067)
1.5 (0.059)
26 min. (1.024)
3.9 max. (0.154)
26 min. (1.024)
TZX-Series
Vishay Semiconductors Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number 85614 Rev. 2.1, 27-Mar-07
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Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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